NTMFS4941NT1G
| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Package / Case | DFN |
| Surface Mount | YES |
| Number of Pins | 5 |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 910mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Pin Count | 5 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.56W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11.6 ns |
| Transistor Application | SWITCHING |
| Rise Time | 22ns |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 2.7 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 47A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 9A |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 1.65nF |
| Avalanche Energy Rating (Eas) | 42 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 9mOhm |
| Rds On Max | 6.2 mΩ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet