NTMFS4923NET1G
| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Package / Case | SOIC |
| Surface Mount | YES |
| Number of Pins | 5 |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 48W |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Pin Count | 5 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.63W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16.3 ns |
| Transistor Application | SWITCHING |
| Rise Time | 20ns |
| Drain to Source Voltage (Vdss) | 30V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 6.6 ns |
| Turn-Off Delay Time | 27.5 ns |
| Continuous Drain Current (ID) | 91A |
| Threshold Voltage | 1.63V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 12.7A |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 4.85nF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 4.8mOhm |
| Rds On Max | 3.3 mΩ |
| Height | 1.1mm |
| Length | 5.1mm |
| Width | 6.1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet