NTMFD4902NFT1G
| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.16W |
| Terminal Form | FLAT |
| Pin Count | 8 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN SOURCE |
| Power - Max | 1.1W 1.16W |
| FET Type | 2 N-Channel (Dual), Schottky |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 10.3A 13.3A |
| Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Continuous Drain Current (ID) | 13.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 13.5A |
| Drain-source On Resistance-Max | 0.01Ohm |
| Pulsed Drain Current-Max (IDM) | 60A |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
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