NTMD4820NR2G
| Parameters | |
|---|---|
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.28W |
| Turn On Delay Time | 9.4 ns |
| Power - Max | 750mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 940pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4.5V |
| Rise Time | 4ns |
| Fall Time (Typ) | 4 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 6.4A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 4.9A |
| Drain-source On Resistance-Max | 0.02Ohm |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.29W |
| Terminal Form | GULL WING |
| Base Part Number | NTMD4820N |
| Pin Count | 8 |
| Number of Elements | 1 |
See Relate Datesheet