NTLLD4901NFTWG
| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Surface Mount | YES |
| Number of Pins | 8 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Resistance | 17.4MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 810mW |
| Pin Count | 8 |
| Element Configuration | Dual |
| Power Dissipation | 3.23W |
| Power - Max | 800mW 810mW |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 17.4m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 605pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A 6.3A |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Continuous Drain Current (ID) | 6.3A |
| Threshold Voltage | 1.2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 9.6A |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet