NTJS3151PT1G
| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 45mOhm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -12V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -3.3A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Power Dissipation-Max | 625mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 625mW |
| Turn On Delay Time | 860 ps |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 3.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
| Rise Time | 1.5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 1.5 ns |
| Turn-Off Delay Time | 3.5 ns |
| Continuous Drain Current (ID) | 3.3A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 2.7A |
| Drain to Source Breakdown Voltage | -12V |
| Height | 1mm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 19 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Number of Pins | 6 |
See Relate Datesheet