NTHD4N02FT1G
| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 11 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2.7A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 910mW Tj |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 910mW |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 2.9A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A Tj |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Rise Time | 9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 3.9A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 2.9A |
| Drain to Source Breakdown Voltage | 20V |
| FET Feature | Schottky Diode (Isolated) |
| Feedback Cap-Max (Crss) | 50 pF |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet