| Parameters | |
|---|---|
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 4 |
| Terminal Finish | TIN LEAD |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | P-CHANNEL |
| JEDEC-95 Code | TO-261AA |
| Drain Current-Max (Abs) (ID) | 3.7A |
| Drain-source On Resistance-Max | 0.1Ohm |
| Pulsed Drain Current-Max (IDM) | 19A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 250 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Status | Non-RoHS Compliant |