NTD5865N-1G
| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Rise Time | 17ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.5 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 38A |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Gate to Source Voltage (Vgs) | 20V |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Drain to Source Breakdown Voltage | 60V |
| Surface Mount | NO |
| Avalanche Energy Rating (Eas) | 36 mJ |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Height | 2.38mm |
| Operating Temperature | -55°C~175°C TJ |
| Length | 6.73mm |
| Packaging | Tube |
| Published | 2008 |
| Width | 6.22mm |
| Radiation Hardening | No |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| RoHS Status | RoHS Compliant |
| Part Status | Obsolete |
| Lead Free | Lead Free |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 18MOhm |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | THROUGH-HOLE |
| Pin Count | 4 |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 71W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 52W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 18m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1261pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 43A Tc |
See Relate Datesheet