NGTB25N120IHLWG
| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 192W |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 250W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 192W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 50A |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 1.85V |
| Test Condition | 600V, 25A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 25A |
| Turn Off Time-Nom (toff) | 475 ns |
| Gate Charge | 200nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | -/235ns |
| Switching Energy | 800μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Height | 21.08mm |
| Length | 16.26mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet