NGB8206N
| Parameters | |
|---|---|
| Current - Collector Pulsed (Icm) | 50A |
| Td (on/off) @ 25°C | -/5μs |
| Gate-Emitter Voltage-Max | 15V |
| Gate-Emitter Thr Voltage-Max | 2.1V |
| Fall Time-Max (tf) | 14000ns |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2009 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 2 |
| Terminal Finish | Tin/Lead (Sn80Pb20) |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | NGB8206 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Rise Time-Max | 8000ns |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Case Connection | COLLECTOR |
| Input Type | Logic |
| Power - Max | 150W |
| Transistor Application | AUTOMOTIVE IGNITION |
| Polarity/Channel Type | N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) | 390V |
| Current - Collector (Ic) (Max) | 20A |
| Power Dissipation-Max (Abs) | 150W |
| Turn On Time | 6500 ns |
| Test Condition | 300V, 9A, 1k Ω, 5V |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Turn Off Time-Nom (toff) | 18500 ns |
See Relate Datesheet