NGB8204NT4G
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 400V |
| Max Power Dissipation | 115W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 18A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NGB8204 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Rise Time-Max | 7000ns |
| Element Configuration | Single |
| Power Dissipation | 115W |
| Case Connection | COLLECTOR |
| Input Type | Logic |
| Transistor Application | AUTOMOTIVE IGNITION |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 430V |
| Max Collector Current | 18A |
| Collector Emitter Breakdown Voltage | 430V |
| Turn On Time | 5200 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 4V, 15A |
| Turn Off Time-Nom (toff) | 13000 ns |
| Current - Collector Pulsed (Icm) | 50A |
| Gate-Emitter Voltage-Max | 18V |
| Gate-Emitter Thr Voltage-Max | 1.9V |
| Fall Time-Max (tf) | 15000ns |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet