NE85633-A
| Parameters | |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Strip |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| HTS Code | 8541.21.00.75 |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA 10V |
| Collector Emitter Breakdown Voltage | 12V |
| Gain | 11.5dB |
| Transition Frequency | 7000MHz |
| Frequency - Transition | 7GHz |
| Continuous Collector Current | 100mA |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 1pF |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| RoHS Status | RoHS Compliant |
See Relate Datesheet