NE5511279A-T1-A
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Package / Case | 4-SMD, Flat Leads |
| Number of Pins | 4 |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 7.5V |
| Max Power Dissipation | 20W |
| Terminal Position | QUAD |
| Current Rating | 79A |
| Frequency | 900MHz |
| Base Part Number | NE55112 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 20W |
| Case Connection | SOURCE |
| Current - Test | 400mA |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 7.5V |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Continuous Drain Current (ID) | 3A |
| Gate to Source Voltage (Vgs) | 6V |
| Gain | 15dB |
| Max Output Power | 10W |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain to Source Breakdown Voltage | 20V |
| Power - Output | 40dBm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Min Breakdown Voltage | 20V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet