NDT02N40T1G

NDT02N40T1G

Trans MOSFET N-CH 400V 0.4A 4-Pin SOT-223 T/R


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NDT02N40T1G
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 159
  • Description: Trans MOSFET N-CH 400V 0.4A 4-Pin SOT-223 T/R (Kg)

Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 121pF @ 25V
Current - Continuous Drain (Id) @ 25°C 400mA Tc
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 400mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0055Ohm
Pulsed Drain Current-Max (IDM) 1.6A
Avalanche Energy Rating (Eas) 120 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 24 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Power Dissipation-Max 2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
See Relate Datesheet

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