NDD60N360U1-35G

NDD60N360U1-35G

MOSFET NFET DPAK 600V 114A 360MO


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NDD60N360U1-35G
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 727
  • Description: MOSFET NFET DPAK 600V 114A 360MO (Kg)

Details

Tags

Parameters
Pin Count 3
Number of Elements 1
Power Dissipation-Max 114W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 360m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 44A
Avalanche Energy Rating (Eas) 64 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
See Relate Datesheet

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