NDB5060L
| Parameters | |
|---|---|
| Terminal Form | GULL WING |
| Current Rating | 26A |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Voltage | 60V |
| Power Dissipation-Max | 68W Tc |
| Element Configuration | Single |
| Current | 26A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 68W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 26A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 5V |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Rise Time | 200ns |
| Mount | Surface Mount |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Vgs (Max) | ±16V |
| Number of Pins | 3 |
| Fall Time (Typ) | 102 ns |
| Turn-Off Delay Time | 45 ns |
| Transistor Element Material | SILICON |
| Continuous Drain Current (ID) | 26A |
| Operating Temperature | -65°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Gate to Source Voltage (Vgs) | 16V |
| Pbfree Code | yes |
| Drain-source On Resistance-Max | 0.05Ohm |
| Part Status | Active |
| Drain to Source Breakdown Voltage | 60V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Radiation Hardening | No |
| Number of Terminations | 2 |
| RoHS Status | ROHS3 Compliant |
| ECCN Code | EAR99 |
| Lead Free | Lead Free |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
See Relate Datesheet