MWI450-12E9

MWI450-12E9

IGBT MODULE 1200V 640A 2200W E+


  • Manufacturer: IXYS
  • Origchip NO: 401-MWI450-12E9
  • Package: E+
  • Datasheet: PDF
  • Stock: 615
  • Description: IGBT MODULE 1200V 640A 2200W E+ (Kg)

Details

Tags

Parameters
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E+
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 17
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 2.2kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MWI
Pin Count 29
JESD-30 Code R-XUFM-X17
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase
Case Connection ISOLATED
Power - Max 2200W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 640A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 33nF
Turn On Time 306 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 450A
Turn Off Time-Nom (toff) 575 ns
IGBT Type NPT
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 33nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

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