MTP2P50EG
| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 5 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 6Ohm |
| Terminal Finish | Tin (Sn) |
| Additional Feature | HIGH VOLTAGE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -500V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -2A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 75W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 75W |
| Case Connection | DRAIN |
| Turn On Delay Time | 12 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1183pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Rise Time | 14ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 19 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 2A |
| Threshold Voltage | -3V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 2A |
| Drain to Source Breakdown Voltage | 500V |
| Pulsed Drain Current-Max (IDM) | 6A |
| Avalanche Energy Rating (Eas) | 80 mJ |
| Nominal Vgs | 3 V |
| Height | 9.28mm |
| Length | 10.28mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet