MS2200
| Parameters | |
|---|---|
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Pin Count | 4 |
| JESD-30 Code | R-CDFM-F4 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | BASE |
| Power - Max | 1167W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 65V |
| Max Collector Current | 43.2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A 5V |
| Collector Emitter Breakdown Voltage | 65V |
| Gain | 9.7dB |
| Max Frequency | 500MHz |
| Frequency - Transition | 400MHz~500MHz |
| Collector Base Voltage (VCBO) | 65V |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | M102 |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | 200°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Additional Feature | HIGH RELIABILITY |
| Max Power Dissipation | 1.167kW |
See Relate Datesheet