MMIX4G20N250
| Parameters | |
|---|---|
| Factory Lead Time | 28 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 24-SMD Module, 9 Leads |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Published | 2012 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 9 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 100W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 9 |
| JESD-30 Code | R-PDSO-G9 |
| Number of Elements | 4 |
| Configuration | Half Bridge |
| Case Connection | ISOLATED |
| Power - Max | 100W |
| Transistor Application | GENERAL PURPOSE SWITCHING |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 3.1V |
| Max Collector Current | 23A |
| Current - Collector Cutoff (Max) | 10μA |
| Collector Emitter Breakdown Voltage | 2.5kV |
| Voltage - Collector Emitter Breakdown (Max) | 2500V |
| Turn On Time | 217 ns |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 1066 ns |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 1190pF @ 15V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet