MMDT2907V-7
| Parameters | |
|---|---|
| Width | 1.2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 19 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Weight | 3.005049mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 150mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -600mA |
| Frequency | 200MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MMDT2907V |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | PNP |
| Element Configuration | Dual |
| Power Dissipation | 150mW |
| Gain Bandwidth Product | 200MHz |
| Transistor Type | 2 PNP (Dual) |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 10nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 75 |
| Turn Off Time-Max (toff) | 100ns |
| Turn On Time-Max (ton) | 45ns |
| Height | 600μm |
| Length | 1.6mm |
See Relate Datesheet