MMBTA14LT1HTSA1

MMBTA14LT1HTSA1

MMBTA14LT1HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-MMBTA14LT1HTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 972
  • Description: MMBTA14LT1HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Collector Emitter Breakdown Voltage 30V
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 300mA
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 30V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 30V
Max Power Dissipation 330mW
Current Rating 300mA
Base Part Number MMBTA
Number of Elements 1
Polarity NPN
Element Configuration Single
Power - Max 330mW
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
See Relate Datesheet

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