| Parameters | |
|---|---|
| Factory Lead Time | 32 Weeks |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Operating Temperature | -40°C~175°C TJ |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 1.75kW |
| Number of Elements | 1 |
| Configuration | Half Bridge |
| Power - Max | 1750W |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.8V |
| Max Collector Current | 720A |
| Current - Collector Cutoff (Max) | 1.8mA |
| Collector Emitter Breakdown Voltage | 650V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 600A |
| IGBT Type | PT |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| RoHS Status | ROHS3 Compliant |