Parameters | |
---|---|
Configuration | Half Bridge |
Case Connection | ISOLATED |
Power - Max | 1100W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.8V |
Max Collector Current | 280A |
Current - Collector Cutoff (Max) | 3.3mA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Input Capacitance | 11nF |
Turn On Time | 230 ns |
Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 200A |
Turn Off Time-Nom (toff) | 730 ns |
IGBT Type | NPT |
NTC Thermistor | No |
Input Capacitance (Cies) @ Vce | 11nF @ 25V |
RoHS Status | RoHS Compliant |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Y3-Li |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 2006 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 11 |
Additional Feature | FAST SWITCHING, LOW SATURATION VOLTAGE |
Max Power Dissipation | 1.1kW |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Base Part Number | MII |
Pin Count | 11 |
JESD-30 Code | R-XUFM-X11 |
Number of Elements | 2 |