MICROFJ-40035-TSV-TR1
| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 14-WBGA |
| Shape | SQUARE |
| Operating Temperature | -40°C~85°C |
| Series | J-SERIES SIPM |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 4 (72 Hours) |
| Number of Functions | 1 |
| Configuration | COMPLEX |
| Diode Type | Avalanche |
| Response Time | 110ps |
| Voltage - DC Reverse (Vr) (Max) | 24.7V |
| Size | 3.93mm |
| Wavelength | 420nm |
| Dark Current-Max | 4000nA |
| Spectral Range | 200nm ~ 900nm |
| Active Area | 15.45mm2 |
| Infrared Range | NO |
| Current - Dark (Typ) | 3μA |
| Reverse Breakdown Voltage-Min | 24.2V |
| RoHS Status | ROHS3 Compliant |
MICROFJ-40035-TSV-TR1 Overview
Photodiodes are packaged in 14-WBGA packages in order to ensure their safety. As long as the photodiodes are operated continuously in reverse-bias mode, the maximum voltage they can tolerate is 24.7V.
MICROFJ-40035-TSV-TR1 Features
Moisture Sensitivity Level (MSL): 4 (72 Hours)
Operating Temperature: -40°C~85°C
Diode Type: Avalanche
Spectral Range: 200nm ~ 900nm
Response Time: 110ps
MICROFJ-40035-TSV-TR1 Applications
There are a lot of ON Semiconductor MICROFJ-40035-TSV-TR1 Photodiodes applications.
- High speed photo detectors
- YAG laser detection
- Photo interrupters
- Optical Analytics
- Machine Controls
- Electronic Equipment
- Diode Laser Monitoring
- Range finding
- High speed photo detector
- Light Barriers