MG200Q2YS60A
| Parameters | |
|---|---|
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Transistor Element Material | SILICON |
| Operating Temperature | -20°C~150°C TJ |
| Published | 2002 |
| Series | IGBTMOD™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 11 |
| Max Power Dissipation | 2kW |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 11 |
| JESD-30 Code | R-XUFM-X11 |
| Number of Elements | 2 |
| Configuration | Half Bridge |
| Case Connection | ISOLATED |
| Power - Max | 2000W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.8V |
| Max Collector Current | 200A |
| Current - Collector Cutoff (Max) | 1mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 15nF |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 200A |
| NTC Thermistor | No |
| Input Capacitance (Cies) @ Vce | 15nF @ 10V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet