 
    | Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | 
| Contact Plating | Tin | 
| Mount | Through Hole | 
| Mounting Type | Through Hole | 
| Package / Case | ISOWATT218FX | 
| Transistor Element Material | SILICON | 
| Operating Temperature | 150°C TJ | 
| Packaging | Tube | 
| JESD-609 Code | e3 | 
| Part Status | Obsolete | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Subcategory | Other Transistors | 
| Max Power Dissipation | 57W | 
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | 
| Reach Compliance Code | not_compliant | 
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | 
| Base Part Number | MD1803 | 
| Pin Count | 3 | 
| JESD-30 Code | R-PSFM-T3 | 
| Qualification Status | Not Qualified | 
| Number of Elements | 1 | 
| Element Configuration | Single | 
| Power Dissipation | 57W | 
| Case Connection | ISOLATED | 
| Transistor Application | AMPLIFIER | 
| Polarity/Channel Type | NPN | 
| Transistor Type | NPN | 
| Collector Emitter Voltage (VCEO) | 700V | 
| Max Collector Current | 10A | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5.5 @ 5A 5V | 
| Current - Collector Cutoff (Max) | 200μA | 
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.25A, 5A | 
| Collector Emitter Breakdown Voltage | 700V | 
| Emitter Base Voltage (VEBO) | 10V | 
| hFE Min | 5.5 | 
| Continuous Collector Current | 10A | 
| RoHS Status | ROHS3 Compliant |