MCQ4822-TP
| Parameters | |
|---|---|
| Factory Lead Time | 22 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TA |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.4W Ta |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 26m Ω @ 6A, 4.5V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1250pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain-source On Resistance-Max | 0.016Ohm |
| Pulsed Drain Current-Max (IDM) | 30A |
| DS Breakdown Voltage-Min | 30V |
| Turn Off Time-Max (toff) | 30ns |
| Turn On Time-Max (ton) | 14ns |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet