| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 60 ns |
| Turn-Off Delay Time | 100 ns |
| Continuous Drain Current (ID) | 4.5A |
| Threshold Voltage | -1.3V |
| Gate to Source Voltage (Vgs) | 10V |
| Drain-source On Resistance-Max | 0.073Ohm |
| Pulsed Drain Current-Max (IDM) | 18A |
| DS Breakdown Voltage-Min | 30V |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Number of Pins | 88 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2012 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Additional Feature | ESD PROTECTED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Reach Compliance Code | not_compliant |
| JESD-30 Code | R-XDSO-F6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 8.2 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 73m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
| Rise Time | 28ns |
| Drain to Source Voltage (Vdss) | 30V |