| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 6 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, Flat Lead |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TA |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1W |
| Turn On Delay Time | 9.9 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 69m Ω @ 1.5A, 2.5V |
| Vgs(th) (Max) @ Id | 800mV @ 1mA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 2.5V |
| Rise Time | 49ns |
| Drive Voltage (Max Rds On,Min Rds On) | 0.9V 2.5V |
| Vgs (Max) | ±5V |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 109 ns |
| Continuous Drain Current (ID) | 3.5A |
| Gate to Source Voltage (Vgs) | 5V |
| Drain-source On Resistance-Max | 0.069Ohm |
| Drain to Source Breakdown Voltage | 12V |
| Height | 850μm |
| Length | 2mm |
| Width | 1.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |