MA4P1200NM-401T
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Package / Case | Axial |
| Number of Pins | 401 |
| Diode Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Additional Feature | LOW DISTORTION |
| HTS Code | 8541.10.00.80 |
| Subcategory | PIN Diodes |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal Form | WIRE |
| Pin Count | 2 |
| JESD-30 Code | O-CALF-W2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.5W |
| Element Configuration | Single |
| Diode Type | PIN - Single |
| Power Dissipation | 5.5W |
| Case Connection | ISOLATED |
| Forward Current | 50mA |
| Application | ATTENUATOR; SWITCHING |
| Forward Voltage | 850mV |
| Capacitance @ Vr, F | 1.5pF @ 50V 1MHz |
| Reverse Voltage | 100V |
| Reverse Voltage (DC) | 100V |
| Frequency Band | HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
| Diode Capacitance-Nom | 1.2pF |
| Resistance @ If, F | 750mOhm @ 50mA 100MHz |
| Diode Capacitance-Max | 1.2pF |
| Minority Carrier Lifetime-Nom | 0.008 µs |
| Diode Res Test Frequency | 100MHz |
| Diode Forward Resistance-Max | 0.75Ohm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet