| Parameters | |
|---|---|
| Additional Feature | HIGH SENSITIVITY |
| Subcategory | Photo Transistors |
| Max Power Dissipation | 100mW |
| Orientation | Side View |
| Number of Functions | 1 |
| Reach Compliance Code | unknown |
| Number of Elements | 1 |
| Polarity | NPN |
| Configuration | SINGLE |
| Power Dissipation | 100mW |
| Viewing Angle | 30° |
| Optoelectronic Device Type | PHOTO TRANSISTOR |
| Lens Style | Domed |
| Rise Time | 20μs |
| Fall Time (Typ) | 20 μs |
| Collector Emitter Voltage (VCEO) | 5V |
| Max Collector Current | 600μA |
| Collector Emitter Breakdown Voltage | 30V |
| Wavelength | 940nm |
| Collector Emitter Saturation Voltage | 400mV |
| Max Breakdown Voltage | 30V |
| Factory Lead Time | 12 Weeks |
| Dark Current | 100nA |
| Mount | Through Hole |
| Infrared Range | YES |
| Mounting Type | Through Hole |
| Light Current-Nom | 1mA |
| Package / Case | Radial, Side View |
| RoHS Status | ROHS3 Compliant |
| Number of Pins | 2 |
| Shape | ROUND |
| Operating Temperature | -40°C~85°C TA |
| Packaging | Bag |
| Published | 2000 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |