LET20030C
| Parameters | |
|---|---|
| Mount | Screw |
| Package / Case | M243 |
| Number of Pins | 3 |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 108W |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Current Rating | 9A |
| Frequency | 2GHz |
| Base Part Number | LET20030 |
| Pin Count | 2 |
| JESD-30 Code | R-PDFM-F2 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 400mA |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 75V |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Continuous Drain Current (ID) | 9A |
| Gate to Source Voltage (Vgs) | 80V |
| Drain Current-Max (Abs) (ID) | 4A |
| DS Breakdown Voltage-Min | 65V |
| Power - Output | 45W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Noise Figure | 13.9 dB |
| Voltage - Test | 28V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet