| Parameters | |
|---|---|
| Case Connection | GATE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Breakdown Voltage | -25V |
| Drain to Source Voltage (Vdss) | 25V |
| Continuous Drain Current (ID) | 500mA |
| Gate to Source Voltage (Vgs) | -25V |
| FET Technology | JUNCTION |
| Drain to Source Resistance | 3Ohm |
| Feedback Cap-Max (Crss) | 35 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 500mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 4.5V @ 1μA |
| Resistance - RDS(On) | 3Ohm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 1W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 500mA |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | DEPLETION MODE |
| Power Dissipation | 1W |