JAN2N6901
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-205AF Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| Series | Military, MIL-PRF-19500/570 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| HTS Code | 8541.21.00.95 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Pin Count | 2 |
| Reference Standard | MIL-19500/570B |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 8.33W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 25 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.4 Ω @ 1.07A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Current - Continuous Drain (Id) @ 25°C | 1.69A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 5V |
| Rise Time | 80ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 80 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 1.69A |
| Gate to Source Voltage (Vgs) | 10V |
| DS Breakdown Voltage-Min | 100V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet