| Parameters | |
|---|---|
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Drain to Source Voltage (Vdss) | 35V |
| Continuous Drain Current (ID) | 20mA |
| Gate to Source Voltage (Vgs) | -35V |
| FET Technology | JUNCTION |
| Feedback Cap-Max (Crss) | 5 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 20mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 3V @ 1μA |
| Resistance - RDS(On) | 30Ohm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 43 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 201mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2006 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 35V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 50mA |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | J111 |