IXZ308N120
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Package / Case | 6-SMD, Flat Lead Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Packaging | Tube |
| Published | 2004 |
| Series | Z-MOS™ |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Voltage - Rated | 1200V |
| Max Power Dissipation | 880W |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Frequency | 65MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| Transistor Application | SWITCHING |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Transistor Type | N-Channel |
| Continuous Drain Current (ID) | 8A |
| Gain | 23dB |
| Drain Current-Max (Abs) (ID) | 8A |
| DS Breakdown Voltage-Min | 1200V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 2.1Ohm |
| Voltage - Test | 100V |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
See Relate Datesheet