IXGR32N170H1
| Parameters | |
|---|---|
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 200W |
| Base Part Number | IXG*32N170 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Power - Max | 200W |
| Transistor Application | POWER CONTROL |
| Rise Time | 250ns |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Max Collector Current | 38A |
| Reverse Recovery Time | 230 ns |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Voltage - Collector Emitter Breakdown (Max) | 1700V |
| Collector Emitter Saturation Voltage | 3.5V |
| Turn On Time | 90 ns |
| Test Condition | 1360V, 21A, 2.7 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 21A |
| Turn Off Time-Nom (toff) | 920 ns |
| IGBT Type | NPT |
| Gate Charge | 155nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 45ns/270ns |
| Switching Energy | 10.6mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Fall Time-Max (tf) | 500ns |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS247™ |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2004 |
See Relate Datesheet