IXFP16N50P3
| Parameters | |
|---|---|
| Power Dissipation-Max | 330W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 360m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1515pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 16A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Turn-Off Delay Time | 44 ns |
| Continuous Drain Current (ID) | 16A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Pulsed Drain Current-Max (IDM) | 40A |
| DS Breakdown Voltage-Min | 500V |
| Height | 16mm |
| Length | 10.66mm |
| Width | 4.83mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 26 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Series | HiPerFET™, Polar3™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
See Relate Datesheet