| Parameters | |
|---|---|
| Mount | Surface Mount |
| Package / Case | TO-252-3 |
| Subcategory | Insulated Gate BIP Transistors |
| Operating Temperature (Max) | 150°C |
| Power Dissipation-Max | 45W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.1V |
| Max Collector Current | 9A |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| RoHS Status | RoHS Compliant |