| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Supplier Device Package | D-Pak |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 75W Tc |
| Element Configuration | Single |
| Power Dissipation | 75W |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2150pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 86A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V |
| Rise Time | 49ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 86A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 2.15nF |
| Drain to Source Resistance | 5.8mOhm |
| Rds On Max | 5.8 mΩ |
| Height | 2.26mm |
| Length | 6.7056mm |
| Width | 6.22mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |