| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 5.8MOhm |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 75W Tc |
| Element Configuration | Single |
| Power Dissipation | 75W |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5.8m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2150pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 86A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V |
| Rise Time | 49ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 86A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Dual Supply Voltage | 30V |
| Recovery Time | 36 ns |
| Nominal Vgs | 1.8 V |
| Height | 2.3876mm |
| Length | 6.7056mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |