IRLR3636TRLPBF
| Parameters | |
|---|---|
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 143W |
| Factory Lead Time | 12 Weeks |
| Case Connection | DRAIN |
| Mount | Surface Mount |
| FET Type | N-Channel |
| Mounting Type | Surface Mount |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.8m Ω @ 50A, 10V |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Transistor Element Material | SILICON |
| Vgs(th) (Max) @ Id | 2.5V @ 100μA |
| Operating Temperature | -55°C~175°C TJ |
| Input Capacitance (Ciss) (Max) @ Vds | 3779pF @ 50V |
| Packaging | Tape & Reel (TR) |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Published | 2009 |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 4.5V |
| Series | HEXFET® |
| Rise Time | 216ns |
| JESD-609 Code | e3 |
| Part Status | Active |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Fall Time (Typ) | 69 ns |
| Number of Terminations | 2 |
| Continuous Drain Current (ID) | 50A |
| JEDEC-95 Code | TO-252AA |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Drain-source On Resistance-Max | 0.0083Ohm |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Breakdown Voltage | 60V |
| Terminal Form | GULL WING |
| Pulsed Drain Current-Max (IDM) | 396A |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Avalanche Energy Rating (Eas) | 170 mJ |
| RoHS Status | ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 143W Tc |
See Relate Datesheet