IRLMS2002TR
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2003 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G6 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 30m Ω @ 6.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1310pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
| Drain to Source Voltage (Vdss) | 20V |
| Drain Current-Max (Abs) (ID) | 6.5A |
| Drain-source On Resistance-Max | 0.03Ohm |
| Pulsed Drain Current-Max (IDM) | 20A |
| DS Breakdown Voltage-Min | 20V |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet