IRLML9303TRPBF
| Parameters | |
|---|---|
| Threshold Voltage | -1.3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 12A |
| Recovery Time | 18 ns |
| Nominal Vgs | -1.3 V |
| Height | 1.016mm |
| Length | 3.0226mm |
| Width | 1.397mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 165MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.25W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| Turn On Delay Time | 7.5 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 165m Ω @ 2.3A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
| Rise Time | 14ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8.6 ns |
| Turn-Off Delay Time | 9 ns |
| Continuous Drain Current (ID) | -2.3A |
See Relate Datesheet