IRLML2502TR
| Parameters | |
|---|---|
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 45m Ω @ 4.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| Drain to Source Voltage (Vdss) | 20V |
| JEDEC-95 Code | TO-236AB |
| Drain Current-Max (Abs) (ID) | 4.2A |
| Drain-source On Resistance-Max | 0.045Ohm |
| Pulsed Drain Current-Max (IDM) | 33A |
| DS Breakdown Voltage-Min | 20V |
| Power Dissipation-Max (Abs) | 1.25W |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2003 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
See Relate Datesheet