IRLML2030TRPBF
| Parameters | |
|---|---|
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 11A |
| Recovery Time | 14 ns |
| Nominal Vgs | 1.7 V |
| Height | 1.016mm |
| Length | 3.0226mm |
| Width | 1.397mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 100MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Turn On Delay Time | 4.1 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 2.7A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1nC @ 4.5V |
| Rise Time | 3.3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 2.9 ns |
| Turn-Off Delay Time | 4.5 ns |
| Continuous Drain Current (ID) | 2.7A |
| Threshold Voltage | 1.7V |
See Relate Datesheet