IRLHS6376TRPBF
| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.5W |
| Base Part Number | IRLHS6376 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 4.4 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 63m Ω @ 3.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
| Rise Time | 11ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 9.4 ns |
| Turn-Off Delay Time | 11 ns |
| Continuous Drain Current (ID) | 3.6A |
| Threshold Voltage | 800mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 3.4A |
| Drain-source On Resistance-Max | 0.082Ohm |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 800 mV |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Number of Pins | 6 |
See Relate Datesheet