| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Configuration | Single |
| Power Dissipation-Max | 3.6W Ta 52W Tc |
| Power Dissipation | 3.6W |
| Turn On Delay Time | 9.4 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3m Ω @ 20A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3710pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 28A Ta 105A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
| Rise Time | 23ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 36 ns |
| Turn-Off Delay Time | 67 ns |
| Continuous Drain Current (ID) | 28A |
| Threshold Voltage | 800mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Nominal Vgs | 800 mV |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |